作者
王彦照,宁吉丰,陈宏泰,房玉龙
文章摘要
高功率兼高光束质量的光泵浦垂直外腔面发射激光器(VECSEL)在激光显示、生命科学、国防军事、激光光谱学等许多方面具有重要的应用。为实现大功率光泵浦激光器需求,设计了976 nm的周期增益多量子阱结构以及反射率达到99.9%以上的多层布拉格反射镜(DBR);为减小应变,采用GaAsP张应变垒层来补偿InGaAs量子阱的压应变;利用金属有机化学气相沉积(MOCVD)完成了外延结构制备,最终研制出976 nm VECSEL激光器。使用808 nm激光器泵浦,峰值位于980 nm左右,泵浦功率10 W时激光输出功率>1 W,温漂系数<0.1 nm/K,光束质量M2x<1.1,M2y<1.1,有潜力应用在对潜通信、流式细胞仪等领域。
文章关键词
半导体激光器;光泵浦;金属有机化学气相沉积(MOCVD)
参考文献
[1] 江剑平.半导体激光器.第一版,电子工业出版社,2000,pp.330-334
[2] 何春凤,路国光,单肖楠,秦丽,王立军,等,高功率 980 nm 垂直外腔面发射激光器(VECSEL)的理论研究[J].光学精密工程,2005,13(3):247-252
[3] M.Fukuda,M.Okayasu,J.Temmyo,and J.Nakano,Degradation behavior of 0.98-µm strained quantum well InGaAs/AlGaAs lasers under high-power operation[J]IEEE Journal of Quantum Electronics,1994,vol.30,pp.471-476
[4] C.Yan,Y.Ning,L.Qin,D.Cui,Y.Liu,Y.Sun,Z.Jin,H.Li,G.Tao,C.Wang,L.Wang,and H.Jiang,High-power vertical-cavity surface-emitting laser with an extra Au layer[J]IEEE Photonics Technology Letters,2005,vol.17,pp.1599-1601
[5] S.R.Chinn,J.A.Rossi,C.M.Wolfe,and A.Mooradian,Optically pumped roomtemperature GaAs lasers[J]IEEE Journal of Quantum Electronics,1973,vol.QE-9,pp294–300
[6] 许冠杰,舒永春,刘如彬,舒强,王占国,许立军,光抽运垂直外腔面发射激光器特性与研究进展[J],激光技术,2006,Vol.30,No.4,pp.351-354
[7] M.Kuznetsov,F.Hakimi,R.Sprague,and A.Mooradian,“High power(>0.5 W cw)diode-pumped verticalexternal-cavity surface-emitting semiconductor lasers with circular TEM00 beams,”IEEE Photon.Technol.Lett.9(8),1063-1065(1997).
[8] A.C.Tropper and S.Hoogland,“Extended cavity surface-emitting semiconductor lasers,”Progress in QuantumElectronics 30,1-43(2006).
[9] M.Guina,"VECSEL technology:the semiconductor materials perspective,"Proc.SPIE 12868,Vertical External Cavity Surface Emitting Lasers(VECSELs)XIII,1286802(2024).
[10] S.Yu,G.Hou,C.Tong,Y.Wang,Z.Zhang,J.Wang,"High-Power Narrow-Linewidth tunable 980nm VECSEL based on Off-Axis multi-chip birefringent filters,"Optics&Laser Technology,186,112693(2025).
[11] M.R.Butaev,Ya.K.Skasyrsky,V.I.Kozlovsky,A.Yu.Andreev,I.V.Yarotskaya,A.A.Marmalyuk,"Semiconductor disk laser with a wavelength of 780 nm based on a MOCVD-grown AlGaAs/AlGaAs heterostructure with optical and electron beam pumping,"Quantum Electronics,52(4),362-366(2022).
[12] A.R.Albrecht,Z.Yang,M.Sheik-Bahae,"DBR-free Optically Pumped Semiconductor Disk Lasers,"in Vertical External Cavity Surface Emitting Lasers(VECSELs),Ch.6,Wiley(2021).
[13] Y.Kaneda,D.Mitten,M.Hart,S.H.Warner,J.-P.Penttinen,M.Guina,"Longitudinal scaling of VECSEL output power maintaining narrow linewidth,"Proc.SPIE 11263,Vertical External Cavity Surface Emitting Lasers(VECSELs)X,1126307(2020).
[14] H.-Y.Liu,H.-D.Ma,Q.Bian,Y.Bo,D.-F.Cui,Q.-J.Peng,"Microsecond pulsed yellow emission by intracavity doubled optically pumped two-chip VECSEL,"Laser Physics Letters,20(5),055001(2023).
[15] M.J.Eshghi,M.H.Yavari,"Optically pumped passively mode-locked VECSEL with output peak power of 1.32 KW,"Optics&Laser Technology,174,110577(2024).
Full Text:
DOI